BSS127H6327 Infineon

Symbol Micros: TBSS127

109860

TBSS127

Contractor Symbol:

Case : SOT23

Datasheet

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N-MOSFET 600V 21mA 500Ω 500mW BSS127H6327XTSA2

Parameters

Open channel resistance:	600Ohm
Max. drain current:	21mA
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS127H6327XTSA2 RoHS Case style: SOT23t/r Datasheet

In stock:

5935 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,3100	0,1715	0,1139	0,0951	0,0886

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	600Ohm
Max. drain current:	21mA
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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