BSS138 SOT23 LGE

Symbol Micros: TBSS138 LGE

364986

TBSS138 LGE

Contractor Symbol:

Case : SOT23-3

Datasheet

Technical drawing Add to favourites

Transistor N-MOSFET; 50V; 10V; 3,5Ohm; 220mA; 350mW; -55°C~150°C;

Parameters

Open channel resistance:	3,5Ohm
Max. drain current:	220mA
Max. power loss:	350mW
Case:	SOT23-3
Manufacturer:	LGE
Max. drain-source voltage:	50V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: LGE Manufacturer part number: BSS138 SOT23 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

1295 pcs.

Quantity of pcs.	10+	50+	400+	3000+	6000+
Net price (EUR)	0,0775	0,0298	0,0144	0,0114	0,0111

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Packaging:
3000 Quantity (multiple: 10)

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Manufacturer:: LGE Manufacturer part number: BSS138 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

6670 pcs.

Quantity of pcs.	10+	50+	400+	3000+	6000+
Net price (EUR)	0,0775	0,0298	0,0144	0,0114	0,0111

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000 Quantity (multiple: 10)

- +

• Parameters

Open channel resistance:	3,5Ohm
Max. drain current:	220mA
Max. power loss:	350mW
Case:	SOT23-3
Manufacturer:	LGE
Max. drain-source voltage:	50V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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