BSS138 SOT-23 MDD(MICRODIODE)

Symbol Micros: TBSS138 MDD

530436

TBSS138 MDD

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

50V 500mA 1.1?@4.5V,0.3A 500mW 1.5V 1 N-Channel SOT-23 MOSFETs ROHS

Parameters

Open channel resistance:	3Ohm
Max. drain current:	340mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	MDD
Max. drain-source voltage:	50V
Transistor type:	N-MOSFET

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Estimated date:
2025-11-30

Quantity of pcs.: 3000

• Parameters

Open channel resistance:	3Ohm
Max. drain current:	340mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	MDD
Max. drain-source voltage:	50V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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