BSS138BKS NXP

Symbol Micros: TBSS138bks

109826

TBSS138bks

Contractor Symbol:

Case : SOT363

Datasheet

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2N-MOSFET 60V 320mA 1.6Ω 445mW BSS138BKS,115; BSS138BKS.115;

Parameters

Open channel resistance:	1,6Ohm
Max. drain current:	320mA
Max. power loss:	445mW
Case:	SOT363
Manufacturer:	NXP
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,6Ohm
Max. drain current:	320mA
Max. power loss:	445mW
Case:	SOT363
Manufacturer:	NXP
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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