BSS138BKW NXP

Symbol Micros: TBSS138bkw

109825

TBSS138bkw

Contractor Symbol:

Case : SOT323

Datasheet

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Transistor N-MOSFET; 60V; -/+20V; 1,6Ohm; 320mA; 260mW; -55°C~150°C; Substitute: BSS138BKW,115;

Parameters

Open channel resistance:	1,6Ohm
Max. drain current:	320mA
Max. power loss:	260mW
Case:	SOT323
Manufacturer:	NXP
Max. drain-source voltage:	60V
Max. drain-gate voltage:	10V

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Estimated date:
2027-10-08

Quantity of pcs.: 3000

• Parameters

Open channel resistance:	1,6Ohm
Max. drain current:	320mA
Max. power loss:	260mW
Case:	SOT323
Manufacturer:	NXP
Max. drain-source voltage:	60V
Max. drain-gate voltage:	10V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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