BSS139H6327 Infineon

Symbol Micros: TBSS139
Contractor Symbol:
Case : SOT23
N-MOSFET 250V 100mA 14Ω 360mW BSS139H6327XTSA1
Parameters
Open channel resistance: 30Ohm
Max. drain current: 100mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 250V
Max. gate-source Voltage: 20V
Manufacturer:: Infineon Manufacturer part number: BSS139H6327XTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
50 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3074 0,1687 0,1327 0,1230 0,1179
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Packaging:
200
Manufacturer:: Infineon Manufacturer part number: BSS139H6327XTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
0 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3074 0,1687 0,1327 0,1230 0,1179
Add to comparison tool
Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BSS139H6327XTSA1 Case style: SOT23  
External warehouse:
45200 pcs.
Quantity of pcs. 100+ (Please wait for the order confirmation)
Net price (EUR) 0,2347
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 30Ohm
Max. drain current: 100mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 250V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD