BSS209PWH6327 Infineon

Symbol Micros: TBSS209pw

109865

TBSS209pw

Contractor Symbol:

Case : SOT323

Datasheet

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P-MOSFET 20V 0.63A 550mΩ 300mW BSS209PWH6327XTSA1; BSS209PWH6327; BSS209PW;

Parameters

Open channel resistance:	550mOhm
Max. drain current:	630mA
Max. power loss:	300mW
Case:	SOT323
Manufacturer:	INFINEON
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V

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• Parameters

Open channel resistance:	550mOhm
Max. drain current:	630mA
Max. power loss:	300mW
Case:	SOT323
Manufacturer:	INFINEON
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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