BSS215PH6327 Infineon

Symbol Micros: TBSS215p
Contractor Symbol:
Case : SOT23
P-MOSFET 20V 150mΩ 500mW BSS215PH6327XTSA1
Parameters
Open channel resistance: 280mOhm
Max. drain current: 1,5A
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
         
 
Item available on request
Open channel resistance: 280mOhm
Max. drain current: 1,5A
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD