BSS225H6327 Infineon

Symbol Micros: TBSS225

109869

TBSS225

Contractor Symbol:

Case : SOT89

Datasheet

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N-MOSFET 600V 0.09A 45Ω 1W BSS225H6327FTSA1

Parameters

Open channel resistance:	45Ohm
Max. power loss:	1W
Max. drain current:	90mA
Case:	SOT89
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS225H6327FTSA1 RoHS Case style: SOT89 t/r Datasheet

In stock:

997 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,4472	0,2707	0,2078	0,1876	0,1784

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Packaging:
1000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	45Ohm
Max. power loss:	1W
Max. drain current:	90mA
Case:	SOT89
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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