BSS308PEH6327 Infineon

Symbol Micros: TBSS308pe

110049

TBSS308pe

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-Channel MOSFET; 30V; 20V; 130mOhm; 2A; 500mW; -55°C ~ 150°C; BSS308PEH6327HTSA1 ; supplier allocated ; BSS308PEH6327XTSA1 BSS308PEH6327

Parameters

Open channel resistance:	130mOhm
Max. drain current:	2A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	INFINEON
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	130mOhm
Max. drain current:	2A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	INFINEON
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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