BSS314PEH6327 Infineon

Symbol Micros: TBSS314pe

110050

TBSS314pe

Contractor Symbol:

Case : SOT23

Datasheet

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P-MOSFET 30V 1.5A 140mΩ 500mW BSS314PEH6327XTSA1

Parameters

Open channel resistance:	230mOhm
Max. power loss:	500mW
Max. drain current:	1,5A
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS314PEH6327XTSA1 RoHS Case style: SOT23t/r Datasheet

In stock:

1625 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2135	0,1182	0,0784	0,0654	0,0610

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	230mOhm
Max. power loss:	500mW
Max. drain current:	1,5A
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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