BSS314PEH6327 Infineon

Symbol Micros: TBSS314pe

110050

TBSS314pe

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

P-MOSFET 30V 1.5A 140mΩ 500mW BSS314PEH6327XTSA1

Parameters

Open channel resistance:	230mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS314PEH6327XTSA1 RoHS Case style: SOT23t/r Datasheet

In stock:

1625 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2116	0,1171	0,0777	0,0649	0,0604

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Packaging:
3000 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: BSS314PEH6327XTSA1 Case style: SOT23  

External warehouse:

111000 pcs.

Quantity of pcs.	9000+ (Please wait for the order confirmation)
Net price (EUR)	0,0604

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	230mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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