BSS315PH6327 Infineon

Symbol Micros: TBSS315p

110051

TBSS315p

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

P-MOSFET 30V 1.5A 150mΩ 500mW BSS315PH6327XTSA1

Parameters

Open channel resistance:	270mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS315PH6327XTSA1 Case style: SOT23  

External warehouse:

300000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0509

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: BSS315PH6327XTSA1 Case style: SOT23  

External warehouse:

228000 pcs.

Quantity of pcs.	9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0489

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	270mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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