BSS316NH6327 Infineon

Symbol Micros: TBSS316n

110052

TBSS316n

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

N-MOSFET 30V 1.4A 160mΩ 500mW BSS316NH6327XTSA1

Parameters

Open channel resistance:	280mOhm
Max. drain current:	1,4A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS316NH6327XTSA1 RoHS Case style: SOT23t/r Datasheet

In stock:

1485 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1876	0,0891	0,0501	0,0381	0,0341

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Packaging:
3000/24000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	280mOhm
Max. drain current:	1,4A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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