BSS316NH6327 Infineon
Symbol Micros:
TBSS316n
Case : SOT23
N-MOSFET 30V 1.4A 160mΩ 500mW BSS316NH6327XTSA1
Parameters
Open channel resistance: | 280mOhm |
Max. drain current: | 1,4A |
Max. power loss: | 500mW |
Case: | SOT23 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 30V |
Transistor type: | N-MOSFET |
Open channel resistance: | 280mOhm |
Max. drain current: | 1,4A |
Max. power loss: | 500mW |
Case: | SOT23 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 30V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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