BSS606NH6327 Infineon
Symbol Micros:
TBSS606n
Case : SOT89
N-MOSFET 60V 3.2A 60mΩ 1W BSS606NH6327XTSA1
Parameters
Open channel resistance: | 90mOhm |
Max. drain current: | 3,2A |
Max. power loss: | 1W |
Case: | SOT89 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: BSS606NH6327XTSA1 RoHS
Case style: SOT89 t/r
Datasheet
In stock:
990 pcs.
Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 1000+ |
---|---|---|---|---|---|
Net price (EUR) | 0,7749 | 0,4899 | 0,3863 | 0,3533 | 0,3368 |
Manufacturer:: Infineon
Manufacturer part number: BSS606NH6327XTSA1
Case style: SOT89
External warehouse:
75000 pcs.
Quantity of pcs. | 2000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,3368 |
Open channel resistance: | 90mOhm |
Max. drain current: | 3,2A |
Max. power loss: | 1W |
Case: | SOT89 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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