BSS606NH6327 Infineon

Symbol Micros: TBSS606n

110053

TBSS606n

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Case : SOT89

Datasheet

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N-MOSFET 60V 3.2A 60mΩ 1W BSS606NH6327XTSA1

Parameters

Open channel resistance:	90mOhm
Max. drain current:	3,2A
Max. power loss:	1W
Case:	SOT89
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	90mOhm
Max. drain current:	3,2A
Max. power loss:	1W
Case:	SOT89
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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