BSS606NH6327 Infineon

Symbol Micros: TBSS606n

110053

TBSS606n

Contractor Symbol:

Case : SOT89

Datasheet

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N-MOSFET 60V 3.2A 60mΩ 1W BSS606NH6327XTSA1

Parameters

Open channel resistance:	90mOhm
Max. power loss:	1W
Max. drain current:	3,2A
Case:	SOT89
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS606NH6327XTSA1 RoHS Case style: SOT89 t/r Datasheet

In stock:

990 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3696	0,2029	0,1596	0,1478	0,1417

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Packaging:
1000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	90mOhm
Max. power loss:	1W
Max. drain current:	3,2A
Case:	SOT89
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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