BSS606NH6327 Infineon
Symbol Micros:
TBSS606n
Case : SOT89
N-MOSFET 60V 3.2A 60mΩ 1W BSS606NH6327XTSA1
Parameters
| Open channel resistance: | 90mOhm |
| Max. drain current: | 3,2A |
| Max. power loss: | 1W |
| Case: | SOT89 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: BSS606NH6327XTSA1 RoHS
Case style: SOT89 t/r
Datasheet
In stock:
990 pcs.
| Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,7724 | 0,4883 | 0,3850 | 0,3521 | 0,3357 |
Manufacturer:: Infineon
Manufacturer part number: BSS606NH6327XTSA1
Case style: SOT89
External warehouse:
58000 pcs.
| Quantity of pcs. | 2000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,3357 |
Manufacturer:: Infineon
Manufacturer part number: BSS606NH6327XTSA1
Case style: SOT89
External warehouse:
232000 pcs.
| Quantity of pcs. | 4000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,3357 |
| Open channel resistance: | 90mOhm |
| Max. drain current: | 3,2A |
| Max. power loss: | 1W |
| Case: | SOT89 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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