BSS606N-P

Symbol Micros: TBSS606N-P TEC

372170

TBSS606N-P TEC

Contractor Symbol:

Case : SOT89-3

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 62mOhm; 3,5A; 1,7W; -55°C~150°C; Substitute: BSS606NH6327XTSA1;

Parameters

Open channel resistance:	62mOhm
Max. drain current:	3,5A
Max. power loss:	1,7W
Case:	SOT89-3
Manufacturer:	TECH PUBLIC
Max. drain-source voltage:	60V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: TECH PUBLIC Manufacturer part number: BSS606N-P RoHS 603N. Case style: SOT89-3 Datasheet

In stock:

470 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,4437	0,2676	0,2040	0,1836	0,1772

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	62mOhm
Max. drain current:	3,5A
Max. power loss:	1,7W
Case:	SOT89-3
Manufacturer:	TECH PUBLIC
Max. drain-source voltage:	60V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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