BSS63LT1G

Symbol Micros: TBSS63
Contractor Symbol:
Case : SOT23
Transistor PNP; 30; 350mW; 100V; 200mA; 50MHz; -55°C ~ 150°C; Replacement: BSS63LT1G; BSS63;
Parameters
Power dissipation: 350mW
Manufacturer: Fairchild
Case: SOT23
Current gain factor: 30
Cutoff frequency: 50MHz
Max. collector current: 200mA
Max collector-emmiter voltage: 100V
Manufacturer:: ON-Semiconductor Manufacturer part number: BSS63LT1G RoHS Case style: SOT23t/r  
In stock:
2900 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1322 0,0607 0,0330 0,0247 0,0220
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Packaging:
3000
Manufacturer:: ON-Semiconductor Manufacturer part number: BSS63LT1G Case style: SOT23  
External warehouse:
279000 pcs.
Quantity of pcs. 21000+ (Please wait for the order confirmation)
Net price (EUR) 0,0220
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: BSS63LT1G Case style: SOT23  
External warehouse:
400 pcs.
Quantity of pcs. 100+ (Please wait for the order confirmation)
Net price (EUR) 0,0714
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Power dissipation: 350mW
Manufacturer: Fairchild
Case: SOT23
Current gain factor: 30
Cutoff frequency: 50MHz
Max. collector current: 200mA
Max collector-emmiter voltage: 100V
Operating temperature (range): -55°C ~ 150°C
Transistor type: PNP