BSS670S2LH6327 Infineon

Symbol Micros: TBSS670s2l

110054

TBSS670s2l

Contractor Symbol:

Case : SOT23

Datasheet

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N-MOSFET 55V 540mA 650mΩ 360mW BSS670S2LH6327XTSA1

Parameters

Open channel resistance:	650mOhm
Max. drain current:	540mA
Max. power loss:	360mW
Case:	SOT23
Manufacturer:	INFINEON
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS670S2LH6327XTSA1 Case style: SOT23  

External warehouse:

2500 pcs.

Quantity of pcs.	100+ (Please wait for the order confirmation)
Net price (EUR)	0,0429

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Packaging:
100

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	650mOhm
Max. drain current:	540mA
Max. power loss:	360mW
Case:	SOT23
Manufacturer:	INFINEON
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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