BSS806NH6327 Infineon

Symbol Micros: TBSS806n

110056

TBSS806n

Contractor Symbol:

Case : SOT23

Datasheet

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N-MOSFET 20V 2.3A 57mΩ 500mW BSS806NH6327XTSA1

Parameters

Open channel resistance:	82mOhm
Max. drain current:	2,3A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS806NH6327 RoHS Case style: SOT23t/r Datasheet

In stock:

80 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2202	0,1117	0,0676	0,0535	0,0489

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Packaging:
100 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: BSS806NH6327XTSA1 RoHS Case style: SOT23t/r Datasheet

In stock:

3010 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2202	0,1117	0,0676	0,0535	0,0489

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	82mOhm
Max. drain current:	2,3A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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