BSS806NEH6327XTSA1

Symbol Micros: TBSS806ne

110055

TBSS806ne

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 20V; 8V; 82mOhm; 2,3A; 500mW; -55°C ~ 150°C; Replacement: BSS806NEH6327XTSA1; BSS806NEH6327;

Parameters

Open channel resistance:	82mOhm
Max. power loss:	500mW
Max. drain current:	2,3A
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSS806NE H6327 RoHS Case style: SOT23t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2257	0,1144	0,0694	0,0551	0,0501

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	82mOhm
Max. power loss:	500mW
Max. drain current:	2,3A
Case:	SOT23
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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