BSS83P

Symbol Micros: TBSS83p c

400576

TBSS83p  c

Contractor Symbol:

Case : SOT23

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Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Substitute: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; SP000702486;

Parameters

Open channel resistance:	3mOhm
Max. power loss:	360mW
Max. drain current:	330mA
Case:	SOT23
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	3mOhm
Max. power loss:	360mW
Max. drain current:	330mA
Case:	SOT23
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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