BSS83P

Symbol Micros: TBSS83p c
Contractor Symbol:
Case : SOT23
Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Substitute: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; SP000702486;
Parameters
Open channel resistance: 3mOhm
Max. drain current: 330mA
Max. power loss: 360mW
Case: SOT23
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
         
 
Item available on request
Open channel resistance: 3mOhm
Max. drain current: 330mA
Max. power loss: 360mW
Case: SOT23
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD