BSS84XHZGG2CR 3-Pin DFN-W ROHM

Symbol Micros: TBSS84XHZGG2CR

399723

TBSS84XHZGG2CR

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Case : DFN1010-3W

Datasheet

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Trans MOSFET P-CH 60V 0.23A Automotive 3-Pin DFN-W

Parameters

Open channel resistance:	6,4Ohm
Max. power loss:	1W
Max. drain current:	230mA
Case:	DFN1010-3W
Manufacturer:	ROHM Semiconductor
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	6,4Ohm
Max. power loss:	1W
Max. drain current:	230mA
Case:	DFN1010-3W
Manufacturer:	ROHM Semiconductor
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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