BST82

Symbol Micros: TBST82
Contractor Symbol:
Case : SOT23
Tranzystor N-Channel MOSFET; 100V; 100V; 20V; 23Ohm; 190mA; 830mW; -65°C ~ 150°C; Odpowiednik: BST82.215; BST82,235;
Parameters
Open channel resistance: 23Ohm
Max. drain current: 190mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 100V
Max. drain-gate voltage: 100V
Manufacturer:: NXP Manufacturer part number: BST82 RoHS Case style: SOT23t/r  
In stock:
308 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5701 0,3449 0,2651 0,2393 0,2276
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Packaging:
1000
Manufacturer:: NXP Manufacturer part number: BST82,215 RoHS Case style: SOT23t/r  
In stock:
0 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5701 0,3449 0,2651 0,2393 0,2276
Add to comparison tool
Packaging:
3000
Manufacturer:: NXP Manufacturer part number: BST82,215 RoHS Case style: SOT23t/r  
In stock:
200 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5701 0,3449 0,2651 0,2393 0,2276
Add to comparison tool
Packaging:
200
Open channel resistance: 23Ohm
Max. drain current: 190mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 100V
Max. drain-gate voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -65°C ~ 150°C
Mounting: SMD