BST82

Symbol Micros: TBST82
Contractor Symbol:
Case : SOT23
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N-MOSFET 190mA 100V 0.83W 10Ω
Parameters
Open channel resistance: 23Ohm
Max. drain current: 190mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 100V
Max. drain-gate voltage: 100V
Manufacturer:: NXP Manufacturer part number: BST82,215 RoHS Case style: SOT23t/r  
In stock:
200 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3002 0,1653 0,1300 0,1203 0,1154
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Packaging:
200
Manufacturer:: NXP Manufacturer part number: BST82,215 RoHS Case style: SOT23t/r  
In stock:
3000 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3002 0,1653 0,1300 0,1203 0,1154
Add to comparison tool
Packaging:
3000
Manufacturer:: NXP Manufacturer part number: BST82 RoHS Case style: SOT23t/r  
In stock:
308 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3002 0,1653 0,1300 0,1203 0,1154
Add to comparison tool
Packaging:
1000
Open channel resistance: 23Ohm
Max. drain current: 190mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 100V
Max. drain-gate voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -65°C ~ 150°C
Mounting: SMD

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