BSZ086P03NS3 G
Symbol Micros:
TBSZ086p03ns3
Case : TSDSON08
P-MOSFET 40A 30V 69W 0.086Ω
Parameters
| Open channel resistance: | 13,4mOhm |
| Max. drain current: | 40A |
| Max. power loss: | 69W |
| Case: | TDSON08 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 30V |
| Transistor type: | P-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: BSZ086P03NS3GATMA1
Case style: TSDSON08
External warehouse:
25000 pcs.
| Quantity of pcs. | 5000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1892 |
| Open channel resistance: | 13,4mOhm |
| Max. drain current: | 40A |
| Max. power loss: | 69W |
| Case: | TDSON08 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 30V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 25V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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