BSZ086P03NS3 G

Symbol Micros: TBSZ086p03ns3

125481

TBSZ086p03ns3

Contractor Symbol:

Case : TSDSON08

Datasheet

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P-MOSFET 40A 30V 69W 0.086Ω

Parameters

Open channel resistance:	13,4mOhm
Max. drain current:	40A
Max. power loss:	69W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Max. gate-source Voltage:	25V

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• Parameters

Open channel resistance:	13,4mOhm
Max. drain current:	40A
Max. power loss:	69W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Max. gate-source Voltage:	25V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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