BUK6D120-60PX 

Symbol Micros: TBUK6d120-60px

298661

TBUK6d120-60px

Contractor Symbol:

Case : DFN06

Datasheet

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Transistor P-Channel MOSFET; 60V; +/-20V; 120mOhm; 8A; 15W; -55°C~175°C; Substitute: BUK6D120-60PX; BUK6D120-60PZ;

Parameters

Open channel resistance:	120mOhm
Max. drain current:	8A
Max. power loss:	15W
Case:	DFN06
Manufacturer:	NXP
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: NXP Manufacturer part number: BUK6D120-60PX RoHS Case style: DFN06 Datasheet

In stock:

290 pcs.

Quantity of pcs.	3+	20+	100+	500+	2000+
Net price (EUR)	0,3627	0,2017	0,1594	0,1446	0,1399

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	120mOhm
Max. drain current:	8A
Max. power loss:	15W
Case:	DFN06
Manufacturer:	NXP
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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