BUK6D210-60EX NEXPERIA

Symbol Micros: TBUK6d210-60ex

298748

TBUK6d210-60ex

Contractor Symbol:

Case : DFN6

Datasheet

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Trans MOSFET N-CH 60V 2.1A 6-Pin DFN-MD EP T/R Automotive AEC-Q101 BUK6D210-60EX BUK6D210-60EX

Parameters

Open channel resistance:	210mOhm
Max. drain current:	5,7A
Max. power loss:	15W
Case:	DFN06
Manufacturer:	NXP
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	210mOhm
Max. drain current:	5,7A
Max. power loss:	15W
Case:	DFN06
Manufacturer:	NXP
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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