BUK9M3R3-40H

Symbol Micros: TBUK9m3r3-40h

196497

TBUK9m3r3-40h

Contractor Symbol:

Case : LFPAK33 (SOT1210)

Datasheet

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N-MOSFET (Gate Level LL) 40V 3.3mOhm 80A 1.48K/W

Parameters

Open channel resistance:	9,2mOhm
Max. drain current:	80A
Max. power loss:	101W
Case:	LFPAK33 (SOT1210)
Manufacturer:	NXP
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: NXP Manufacturer part number: BUK9M3R3-40HX RoHS Case style: LFPAK33 (SOT1210) Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2935	0,9883	0,8170	0,7160	0,6808

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Packaging:
10 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	9,2mOhm
Max. drain current:	80A
Max. power loss:	101W
Case:	LFPAK33 (SOT1210)
Manufacturer:	NXP
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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