BUZ11

Symbol Micros: TBUZ11
Contractor Symbol:
Case : TO220
N-MOSFET 30A 50V 75W
Parameters
Open channel resistance: 40mOhm
Max. drain current: 30A
Max. power loss: 75W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 50V
Max. drain-gate voltage: 50V
Manufacturer:: ON-Semicoductor Manufacturer part number: BUZ11-NR4941 RoHS Case style: TO220 Datasheet
In stock:
2328 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 500+
Net price (EUR) 1,1456 0,7622 0,5881 0,5693 0,5458
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Packaging:
50
Manufacturer:: ON-Semicoductor Manufacturer part number: BUZ11-NR4941 Case style: TO220  
External warehouse:
6900 pcs.
Quantity of pcs. 250+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5458
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: BUZ11-NR4941 Case style: TO220  
External warehouse:
9660 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5458
Add to comparison tool
Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 40mOhm
Max. drain current: 30A
Max. power loss: 75W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 50V
Max. drain-gate voltage: 50V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT