BUZ11

Symbol Micros: TBUZ11
Contractor Symbol:
Case : TO220
N-MOSFET 30A 50V 75W
Parameters
Open channel resistance: 40mOhm
Max. drain current: 30A
Max. power loss: 75W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 50V
Max. drain-gate voltage: 50V
Manufacturer:: ON-Semicoductor Manufacturer part number: BUZ11-NR4941 RoHS Case style: TO220 Datasheet
In stock:
1517 pcs.
Quantity of pcs. 1+ 5+ 50+ 200+ 400+
Net price (EUR) 1,2074 0,8011 0,6187 0,5841 0,5748
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Packaging:
50
Manufacturer:: ON-Semicoductor Manufacturer part number: BUZ11-NR4941 RoHS Case style: TO220 Datasheet
In stock:
20 pcs.
Quantity of pcs. 1+ 5+ 50+ 200+ 400+
Net price (EUR) 1,2074 0,8011 0,6187 0,5841 0,5748
Add to comparison tool
Packaging:
20
Open channel resistance: 40mOhm
Max. drain current: 30A
Max. power loss: 75W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 50V
Max. drain-gate voltage: 50V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT