BXS1150N10M

Symbol Micros: TBXS1150n10m

401835

TBXS1150n10m

Contractor Symbol:

Case : SOT23-3

Datasheet

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Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W;

Parameters

Open channel resistance:	150mOhm
Max. drain current:	2,6A
Max. power loss:	2,5W
Case:	SOT23-3
Manufacturer:	BRIDGELUX
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	150mOhm
Max. drain current:	2,6A
Max. power loss:	2,5W
Case:	SOT23-3
Manufacturer:	BRIDGELUX
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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