CSD19535KTT

Symbol Micros: TCSD19535ktt

207613

TCSD19535ktt

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Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 200A 100V 300W 0.0034Ω CSD19535KTTT

Parameters

Open channel resistance:	4,1mOhm
Max. drain current:	200A
Max. power loss:	300W
Case:	TO263 (D2PAK)
Manufacturer:	Texas Instruments
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	4,1mOhm
Max. drain current:	200A
Max. power loss:	300W
Case:	TO263 (D2PAK)
Manufacturer:	Texas Instruments
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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