CSD19535KTT

Symbol Micros: TCSD19535ktt
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Case : TO263 (D2PAK)
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N-MOSFET 200A 100V 300W 0.0034Ω CSD19535KTTT
Parameters
Open channel resistance: 4,1mOhm
Max. drain current: 200A
Max. power loss: 300W
Case: TO263 (D2PAK)
Manufacturer: Texas Instruments
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 4,1mOhm
Max. drain current: 200A
Max. power loss: 300W
Case: TO263 (D2PAK)
Manufacturer: Texas Instruments
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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