CSD19536KCS

Symbol Micros: TCSD19536kcs

207614

TCSD19536kcs

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Case : TO220

Datasheet

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N-MOSFET 150A 100V 375W 0.0027Ω

Parameters

Open channel resistance:	3,2mOhm
Max. drain current:	259A
Max. power loss:	375W
Case:	TO220
Manufacturer:	Texas Instruments
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	3,2mOhm
Max. drain current:	259A
Max. power loss:	375W
Case:	TO220
Manufacturer:	Texas Instruments
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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