CSD23201W10

Symbol Micros: TCSD23201w10

80368

TCSD23201w10

Contractor Symbol:

Case : DSBGA04

Datasheet

Technical drawing Add to favourites

P-CHANNEL NexFET MOSFET 12V, 7A, 66mohm

Parameters

Open channel resistance:	138mOhm
Max. drain current:	2,2A
Max. power loss:	1W
Case:	DSBGA04
Manufacturer:	Texas Instruments
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Texas Instruments Manufacturer part number: CSD23201W10 RoHS Case style: DSBGA04 Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	15+	100+	300+	1000+
Net price (EUR)	0,5737	0,3188	0,2503	0,2361	0,2293

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	138mOhm
Max. drain current:	2,2A
Max. power loss:	1W
Case:	DSBGA04
Manufacturer:	Texas Instruments
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	6V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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