CSD23201W10

Symbol Micros: TCSD23201w10
Contractor Symbol:
Case : DSBGA04
P-CHANNEL NexFET MOSFET 12V, 7A, 66mohm
Parameters
Open channel resistance: 138mOhm
Max. drain current: 2,2A
Max. power loss: 1W
Case: DSBGA04
Manufacturer: Texas Instruments
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
Manufacturer:: Texas Instruments Manufacturer part number: CSD23201W10 RoHS Case style: DSBGA04 Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6230 0,3914 0,3242 0,2895 0,2710
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Packaging:
100
Open channel resistance: 138mOhm
Max. drain current: 2,2A
Max. power loss: 1W
Case: DSBGA04
Manufacturer: Texas Instruments
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
Max. gate-source Voltage: 6V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD