CXG50N65HSEU CREATEK

Symbol Micros: TCXG50n65hseu

534938

TCXG50n65hseu

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 650V; 30V; 100A; 200A; 378W; 4,0V~5,5V; 200nC; -55°C~150°C;

Parameters

Gate charge:	200nC
Max. dissipated power:	378W
Max collector current (impulse):	200A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4V ~ 5,5V
Case:	TO247
Manufacturer:	CREATEK

All parameters

Manufacturer:: Createk Microelectronics Manufacturer part number: CXG50N65HSEU RoHS Case style: TO247 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	5+	30+	150+	300+
Net price (EUR)	2,3421	1,8592	1,6493	1,5770	1,5606

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	200nC
Max. dissipated power:	378W
Max collector current (impulse):	200A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4V ~ 5,5V
Case:	TO247
Manufacturer:	CREATEK
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	30V
Mounting:	THT

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