DF80R12W2H3F_B11

Symbol Micros: TDF80R12W2H3F_B11

399926

TDF80R12W2H3F_B11

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Case :  

Datasheet

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IGBT Modules IGBT HighSpeed 3 DF80R12W2H3FB11BPSA1

Parameters

Max. collector current:	40A
Max collector current (impulse):	80A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Manufacturer:	INFINEON
Operating temperature (range):	-40°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: DF80R12W2H3FB11BPSA1 Case style:    

External warehouse:

60 pcs.

Quantity of pcs.	15+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	51,1805

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Packaging:
15

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Max. collector current:	40A
Max collector current (impulse):	80A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Manufacturer:	INFINEON
Operating temperature (range):	-40°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V

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