DGC40H65M2 DONGHAI

Symbol Micros: TDGC40f65m

405438

TDGC40f65m

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 650V; 30V; 80A; 160A; 280W; 5,0V~7,0V; 84nC; -45°C~175°C;

Parameters

Gate charge:	84nC
Max. dissipated power:	280W
Max. collector current:	80A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO247
Manufacturer:	Donghai

All parameters

Manufacturer:: WXDH Manufacturer part number: DGC40H65M2 RoHS Case style: TO247 Datasheet

In stock:

120 pcs.

Quantity of pcs.	1+	5+	30+	120+	240+
Net price (EUR)	1,9189	1,4215	1,2117	1,1457	1,1292

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Packaging:
30/120 Quantity (multiple: 1)

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• Parameters

Gate charge:	84nC
Max. dissipated power:	280W
Max. collector current:	80A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO247
Manufacturer:	Donghai
Operating temperature (range):	-45°C ~ 175°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	30V
Mounting:	THT

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