DGC40H65M2 DONGHAI
Symbol Micros:
TDGC40f65m
Case : TO247
Transistor IGBT ; 650V; 30V; 80A; 160A; 280W; 5,0V~7,0V; 84nC; -45°C~175°C;
Parameters
| Gate charge: | 84nC |
| Max. dissipated power: | 280W |
| Max collector current (impulse): | 160A |
| Max. collector current: | 80A |
| Forvard volatge [Vgeth]: | 5,0V ~ 7,0V |
| Case: | TO247 |
| Manufacturer: | Donghai |
| Gate charge: | 84nC |
| Max. dissipated power: | 280W |
| Max collector current (impulse): | 160A |
| Max. collector current: | 80A |
| Forvard volatge [Vgeth]: | 5,0V ~ 7,0V |
| Case: | TO247 |
| Manufacturer: | Donghai |
| Operating temperature (range): | -45°C ~ 175°C |
| Collector-emitter voltage: | 650V |
| Gate-emitter voltage: | 30V |
| Mounting: | THT |
Add Symbol
Cancel
All Contractor Symbols