DHG20T65D DONGHAI

Symbol Micros: TDGF20f65m

405435

TDGF20f65m

Contractor Symbol:

Case : TO220iso

Datasheet

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Transistor IGBT ; 650V; 20V; 40A; 60A; 96W; 4,5V~7,0V; 59nC; -55°C~150°C;

Parameters

Gate charge:	59nC
Max. dissipated power:	96W
Max collector current (impulse):	60A
Max. collector current:	40A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO220iso
Manufacturer:	Donghai

All parameters

         

 

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• Parameters

Gate charge:	59nC
Max. dissipated power:	96W
Max collector current (impulse):	60A
Max. collector current:	40A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO220iso
Manufacturer:	Donghai
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	THT

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