DGF30F65M2 DONGHAI

Symbol Micros: TDGF25f65m

405436

TDGF25f65m

Contractor Symbol:

Case : TO220iso

Datasheet

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Transistor IGBT ; 650V; 30V; 60A; 180A; 60W; 5,0V~7,0V; 48nC; -45°C~175°C;

Parameters

Gate charge:	48nC
Max. dissipated power:	60W
Max collector current (impulse):	180A
Max. collector current:	60A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO220iso
Manufacturer:	Donghai

All parameters

Manufacturer:: WXDH Manufacturer part number: DGF30F65M2 RoHS Case style: TO220iso Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	5+	50+	100+	400+
Net price (EUR)	1,2458	0,8721	0,6981	0,6770	0,6558

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Gate charge:	48nC
Max. dissipated power:	60W
Max collector current (impulse):	180A
Max. collector current:	60A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO220iso
Manufacturer:	Donghai
Operating temperature (range):	-45°C ~ 175°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	30V
Mounting:	THT

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