F10N60 DONGHAI

Symbol Micros: TDHF10n60
Contractor Symbol:
Case : TO220iso
Transistor N-Channel MOSFET; 600V; 30V; 900mOhm; 10A; 40W; -55°C ~ 150°C; Similar to: STP10NK60ZFP;
Parameters
Open channel resistance: 900mOhm
Max. drain current: 10A
Max. power loss: 40W
Case: TO220iso
Manufacturer: Donghai
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: WXDH Manufacturer part number: F10N60 RoHS Case style: TO220iso Datasheet
In stock:
100 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 0,9103 0,6669 0,5359 0,4587 0,4329
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Packaging:
50/100
Open channel resistance: 900mOhm
Max. drain current: 10A
Max. power loss: 40W
Case: TO220iso
Manufacturer: Donghai
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT