F10N60 DONGHAI

Symbol Micros: TDHF10n60

350129

TDHF10n60

Contractor Symbol:

Case : TO220iso

Datasheet

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Transistor N-Channel MOSFET; 600V; 30V; 900mOhm; 10A; 40W; -55°C ~ 150°C; Similar to: STP10NK60ZFP;

Parameters

Open channel resistance:	900mOhm
Max. drain current:	10A
Max. power loss:	40W
Case:	TO220iso
Manufacturer:	Donghai
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: WXDH Manufacturer part number: F10N60 RoHS Case style: TO220iso Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	0,9126	0,6686	0,5372	0,4598	0,4340

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	900mOhm
Max. drain current:	10A
Max. power loss:	40W
Case:	TO220iso
Manufacturer:	Donghai
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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