DMHT6016LFJ-13

Symbol Micros: TDMHT6016LFJ-13

529802

TDMHT6016LFJ-13

Contractor Symbol:

Case : VDFN12

Datasheet

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Trans MOSFET N-CH 60V 10.6A 12-Pin VDFN EP T/R

Parameters

Open channel resistance:	30mOhm
Max. drain current:	10,6A
Max. power loss:	1,16W
Case:	VDFN12
Manufacturer:	DIODES
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	30mOhm
Max. drain current:	10,6A
Max. power loss:	1,16W
Case:	VDFN12
Manufacturer:	DIODES
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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