DMN6068LK3-13 TO-252-3

Symbol Micros: TDMN6068lk3

89887

TDMN6068lk3

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Case : TO252

Datasheet

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N-MOSFET 60V 8.5A 2.12W

Parameters

Open channel resistance:	68mOhm
Max. drain current:	8,5A
Max. power loss:	2,12W
Case:	TO252
Manufacturer:	DIODES
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	68mOhm
Max. drain current:	8,5A
Max. power loss:	2,12W
Case:	TO252
Manufacturer:	DIODES
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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