DMN63D8LDW-7 Diodes

Symbol Micros: TDMN63d8ldw

106753

TDMN63d8ldw

Contractor Symbol:

Case : SOT363

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2N-MOSFET 30V 220mA 2.8Ω 300mW DMN63D8LDW-13 (10000pcs/T&R)

Parameters

Open channel resistance:	2,8Ohm
Max. power loss:	300mW
Max. drain current:	220mA
Case:	SOT363
Manufacturer:	DIODES
Max. drain-source voltage:	30V
Transistor type:	2xN-MOSFET

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• Parameters

Open channel resistance:	2,8Ohm
Max. power loss:	300mW
Max. drain current:	220mA
Case:	SOT363
Manufacturer:	DIODES
Max. drain-source voltage:	30V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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