DN2450N8-G Microchip

Symbol Micros: TDN2450n8-g

95614

TDN2450n8-g

Contractor Symbol:

Case : SOT89

Datasheet

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N-MOSFET 500V 230mA 10Ω 1.6W

Parameters

Open channel resistance:	10Ohm
Max. drain current:	230mA
Max. power loss:	1,6W
Case:	SOT89
Manufacturer:	MICROCHIP
Max. drain-source voltage:	500V
Max. drain-gate voltage:	500V

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• Parameters

Open channel resistance:	10Ohm
Max. drain current:	230mA
Max. power loss:	1,6W
Case:	SOT89
Manufacturer:	MICROCHIP
Max. drain-source voltage:	500V
Max. drain-gate voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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