DN3525N8-G

Symbol Micros: TDN3525n8-g

199196

TDN3525n8-g

Contractor Symbol:

Case : SOT89

Datasheet

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Transistor N-Channel MOSFET; 250V; 20V; 6Ohm; 360mA; 1,6W; -55°C ~ 150°C;

Parameters

Open channel resistance:	6Ohm
Max. drain current:	360mA
Max. power loss:	1,6W
Case:	SOT89
Manufacturer:	MICROCHIP
Max. drain-source voltage:	250V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	6Ohm
Max. drain current:	360mA
Max. power loss:	1,6W
Case:	SOT89
Manufacturer:	MICROCHIP
Max. drain-source voltage:	250V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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