DTA114ESA HT SEMI

Symbol Micros: TDTA114ESA HTSEMI

535857

TDTA114ESA HTSEMI

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Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Through Hole TO-92S

Parameters

Power dissipation:	300mW
Manufacturer:	HT
Case:	TO92S
Current gain factor:	30
Cutoff frequency:	250MHz
Max. collector current:	50mA
Max collector-emmiter voltage:	50V

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• Parameters

Power dissipation:	300mW
Manufacturer:	HT
Case:	TO92S
Current gain factor:	30
Cutoff frequency:	250MHz
Max. collector current:	50mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	PNP

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