DTC123JET1G ONSemiconductor

Symbol Micros: TDTC123jet

126130

TDTC123jet

Contractor Symbol:

Case : SC75-3 (SOT416)

Datasheet

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Prebias NPN 200mW 100mA 50V

Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SC75-3 (SOT416)
Current gain factor:	140
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: DTC123JET1G RoHS 8M. Case style: SC75-3 (SOT416) Datasheet

In stock:

500 pcs.

Quantity of pcs.	5+	20+	100+	500+	2000+
Net price (EUR)	0,1175	0,0536	0,0291	0,0217	0,0196

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SC75-3 (SOT416)
Current gain factor:	140
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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