DTC124EKAT,146

Symbol Micros: TDTC124ek

124258

TDTC124ek

Contractor Symbol:

Case : SOT23-3

Datasheet

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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 30mA 250MHz 200mW

Parameters

Power dissipation:	200mW
Manufacturer:	ROHM
Case:	SOT23-3
Current gain factor:	56
Cutoff frequency:	250MHz
Max. collector current:	30mA
Max collector-emmiter voltage:	50V

All parameters

         

 

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• Parameters

Power dissipation:	200mW
Manufacturer:	ROHM
Case:	SOT23-3
Current gain factor:	56
Cutoff frequency:	250MHz
Max. collector current:	30mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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