EMH3FHAT2R

Symbol Micros: TEMH3FHAT2R

381667

TEMH3FHAT2R

Contractor Symbol:

Case : SOT563

Datasheet

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Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6 Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Parameters

Power dissipation:	150mW
Manufacturer:	ROHM Semiconductor
Current gain factor:	600
Case:	SOT563
Cutoff frequency:	250MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

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• Parameters

Power dissipation:	150mW
Manufacturer:	ROHM Semiconductor
Current gain factor:	600
Case:	SOT563
Cutoff frequency:	250MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	2xNPN

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