FCP190N60E

Symbol Micros: TFCP190N60E

91158

TFCP190N60E

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Case : TO220

Datasheet

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N-MOSFET 20.6A 600V 208W 0.190Ω

Parameters

Open channel resistance:	109mOhm
Max. drain current:	20,6A
Max. power loss:	208W
Case:	TO220
Manufacturer:	Fairchild
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	109mOhm
Max. drain current:	20,6A
Max. power loss:	208W
Case:	TO220
Manufacturer:	Fairchild
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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