FCPF11N60

Symbol Micros: TFCPF11N60

91167

TFCPF11N60

Contractor Symbol:

Case : TO220FP

Datasheet

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N-MOSFET 11A 600V 36W 0.38Ω

Parameters

Open channel resistance:	380mOhm
Max. drain current:	11A
Max. power loss:	36W
Case:	TO220FP
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FCPF11N60 RoHS Case style: TO220FP  

In stock:

20 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,2120	1,8550	1,6496	1,5213	1,4746

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	380mOhm
Max. drain current:	11A
Max. power loss:	36W
Case:	TO220FP
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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