FDA20N50_F109

Symbol Micros: TFDA20N50_F109

91183

TFDA20N50_F109

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Case : TO 3P

Datasheet

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N-MOSFET 22A 500V 280W 0.23Ω

Parameters

Open channel resistance:	230mOhm
Max. drain current:	22A
Max. power loss:	280W
Case:	TO 3P
Manufacturer:	Fairchild
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	230mOhm
Max. drain current:	22A
Max. power loss:	280W
Case:	TO 3P
Manufacturer:	Fairchild
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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