FDA28N50

Symbol Micros: TFDA28N50

91185

TFDA28N50

Contractor Symbol:

Case : TO 3P

Datasheet

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N-MOSFET 500V 28A 310W 0.155Ω

Parameters

Open channel resistance:	155mOhm
Max. drain current:	28A
Max. power loss:	310W
Case:	TO 3P
Manufacturer:	Fairchild
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDA28N50 Case style: TO 3P  

External warehouse:

360 pcs.

Quantity of pcs.	60+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,1436

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Packaging:
30

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	155mOhm
Max. drain current:	28A
Max. power loss:	310W
Case:	TO 3P
Manufacturer:	Fairchild
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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